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intel czy1238677 发表于 2015-10-14 12:00
现在大牌有哪些？浦科特闪迪英特尔还有啥？
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镁光三星东芝 Sandisk 10年质保随便操 panwei 发表于 2015-10-14 12:20
镁光三星东芝
东芝，日立，浦科特比较哪个好？ 不要碰TLC Intel SanDisk 我来个low一点的，OCZ ARC 100 新出的低端都是台系主控 糾結品牌也沒意義 本帖最后由 hidebumi 于 2015-10-14 13:58 编辑
都说tlc不好，那为啥850evo保5年呢
https://en.wikipedia.org/wiki/Charge_trap_flash
In a charge trapping flash electrons are stored in a trapping layer just as they are stored in the floating gate in a standard flash memory, EEPROM, or EPROM. The key difference is that the charge trapping layer is an insulator, while the floating gate is a conductor.
High write loads in a flash memory cause stress on the tunnel oxide layer creating small disruptions in the crystal lattice called “oxide defects.” If a large number of such disruptions are created a short circuit develops between the floating gate and the transistor’s channel and the floating gate can no longer hold a charge. This is the root cause of flash wear-out (see Flash memory#Memory wear), which is specified as the chip’s “endurance.” In order to reduce the occurrence of such short circuits, floating gate flash is manufactured using a thick tunnel oxide (~100Å), but this slows erase when Fowler-Nordheim tunneling is used and forces the design to use a higher tunneling voltage, which puts new burdens on other parts of the chip.
A charge trapping cell is relatively immune to such difficulties, since the charge trapping layer is an insulator. A short circuit created by an oxide defect between the charge trapping layer and the channel will drain off only the electrons in immediate contact with the short, leaving the other electrons in place to continue to control the threshold voltage of the transistor. Since short circuits are less of a concern, a thinner tunnel oxide layer can be used (50-70Å) increasing the trapping layer’s coupling to the channel and leading to a faster program speed (with localized trapped charges) and erasing with lower tunneling voltages. The lower tunneling voltages, in turn, place less stress on the tunnel oxide layer, leading to fewer lattice disruptions.
Another important benefit of using a charge trapping cell is that the thin charge trapping layer reduces capacitive coupling between nei**oring cells to improve performance and scalability.
引用第17楼hidebumi于2015-10-14 13:57发表的:
本帖最后由 hidebumi 于 2015-10-14 13:58 编辑 都说tlc不好，那为啥85......
先关心一下这日写入量是多少，再来谈保修几年
----发送自 STAGE1 App for Android. OCZ ARC 100或者闪迪加强版
OCZ是东芝亲儿子 OCZ ARC 100 和 镁光 mx200哪个更好
听说16nm寿命不如19nm的 差别大吗 MLC的一般不用担心寿命随便买，工艺也无所谓，反正你用不完，新工艺功耗还低 求问如何不碰TLC，现在市场上哪几款大容量是MLC的啊？ 256的推arc100 500左右 东芝原厂 不再是以前的白片了 128g的推荐闪迪x110 淘宝270 同配置的有个浦科特m6s然后 最后最推荐的是黑五和我一起海淘160刀的480g闪迪至尊超极速！！ Geminize 发表于 2015-10-14 16:58
是MLC的大多会特意写出来吹，比如东芝
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还有个3bit mlc的三棒要小心 引用第23楼鸳鸳相抱于2015-10-14 16:47发表的:
求问如何不碰TLC，现在市场上哪几款大容量是MLC的啊？
@鸳鸳相抱
掉速。现在都是隔段时间重新擦写来解决，但都是治标不治本。
看介绍，不介绍颗粒的一般是tlc。
----发送自 HUAWEI H60-L12,Android 5.1.1 三爽850pro用着还行啊
----发送自 samsung SCL22,Android 5.0 上半年京东的饥饿鲨很火，不过后来好像出过一波问题，继续观望 引用第25楼Geminize于2015-10-14 16:58发表的:
引用:引用第23楼鸳鸳相抱于2015-10-14 16:47发表的 :求问如何不碰TLC，现在市场......
三棒的3bit mlc看着你当然其实tlc有啥好黑的，只要tlc颗粒价格相比起mlc有30%或者以上的优势那就是有大大的选择的价值。
PS：现在这风向我是看不懂，当初840上市那会我说三棒tlc卖高价一堆人给我说就那点寿命你用不完的怕个屁，结果还没一年一个简简单单的掉速门就变成人人喊打了我真觉看不懂。
在看看隔壁的cpu对比门现在的信仰就那么不值钱，只要出一件事就能打翻在地连一点坚持都没有
----发送自 STAGE1 App for Android. 硬盘和其他硬件不一样，稳定很重要，ssd还要要求速度，三棒掉速导致进了很多人的黑名单很正常，当年海门固件门，前两年Orz的超高返修率，都让群众记恨很长时间的，还有当年IBM的玻璃硬盘… 硬盘和其他硬件不一样，稳定很重要，ssd还要要求速度，三棒掉速导致进了很多人的黑名单很正常，当年海门固件门，前两年Orz的超高返修率，都让群众记恨很长时间的，还有当年IBM的玻璃硬盘… 刚买了金士顿的，看了你们说的有点心虚了 本帖最后由 zhouaa 于 2015-10-14 18:53 编辑
看品牌的你们真分得清吗？
光闪迪就有:普速、Plus、Ultra Plus 、Ultra2（TLC）、Extreme 2、 Extreme Pro这么多种 不要买三星就行了。 我只能说intel售后好... 饥饿鲨 唯一在破处区有专楼的ssd Saker_bobo 发表于 2015-10-14 16:52
256的推arc100 500左右 东芝原厂 不再是以前的白片了 128g的推荐闪迪x110 淘宝270 同配置的有个浦科特m6s
黑五有特价？求详细，准备入个z7级别的笔记本……筹备周边中
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